The 61st JSAP Spring Meeting, 2014

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15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-E13-1~18] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 1:00 PM - 6:15 PM E13 (E301)

3:45 PM - 4:00 PM

[18p-E13-10] Impact of growth conditions of hydride vapor phase epitaxy on crystalline qualities of thick {20-21} GaN layers

○Yasuhiro Hashimoto1, Keisuke Yamane1, Narihito Okada1, Kazuyuki Tadatomo1 (Yamaguchi Univ.1)

Keywords:HVPE,{20-21}GaN,成長条件