The 61st JSAP Spring Meeting, 2014

Presentation information

Print

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-E13-1~18] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 1:00 PM - 6:15 PM E13 (E301)

1:30 PM - 1:45 PM

[18p-E13-2] High quality GaN bulk crystal growth by acidic ammonothermal method

○Makoto Saito1,2, Quanxi Bao1,3, Daisuke Tomida1, Ｋｅｎｔａｒｏ Furusawa1, Yuji Kagamitani2, Rinzo Kayano3, Kun Qiao1, Ｔｏhｒｕ Ishiguro1, Chiaki Yokokyama1, Shigefusa Chichibu1 (IMRAM-Tohoku Univ.1, Mitsubishi Chemical Corp.2, The Japan Steel Works3)

Keywords:GaN,結晶成長,アモノサーマル