[18p-E13-1~18] 15.4 III-V-group nitride crystals

[18p-E13-5] High rate GaN growth using Ga₂O vapor on Na-flux-GaN substrates

^○Hiroaki Takatsu¹, Masami Juta¹, Tomoaki Sumi¹, Yuan Bu¹, Akira Kitamoto¹, Mamoru Imade¹, Masashi Yoshimura¹, Masashi Isemura², Yusuke Mori¹ (Osaka Univ¹, Itochu Plastics Inc²)

Keywords:GaN,Ga2O