The 61st JSAP Spring Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-E13-1~18] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 1:00 PM - 6:15 PM E13 (E301)

3:15 PM - 3:30 PM

[18p-E13-8] Reduction in dislocations and stacking faults in semi-polar {11-22}GaN by hydride vapor phase epitaxy

○Motohisa Ueno1, Keisuke Yamane1, Narihito Okada1, Kazuyuki Tadatomo1 (Yamaguchi Univ.1)

Keywords:半導体