[18p-E2-1~18] 17.1 Growth technology

[18p-E2-4] Graphene growth on the buffer layer on SiC(0001) by molecular beam epitaxy

^○Fumihiko Maeda¹, Makoto Takamura¹, Hiroki Hibino¹ (NTT BRL¹)

Keywords:グラフェン,分子線エピタキシャル成長,バッファー層