The 61st JSAP Spring Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[18p-E5-1~11] 15.6 IV-group-based compounds

Tue. Mar 18, 2014 1:15 PM - 4:15 PM E5 (E105)

1:15 PM - 1:30 PM

△ [18p-E5-1] Temperature Dependence of High-Current-Gain 4H-SiC(000-1) BJT

○Satoshi Asada1, Takafumi Okuda2, Tsunenobu Kimoto2, Jun Suda2 (Kyoto Univ.1, Dept. of Electron. Sci. & Eng., Kyoto Univ.2)

Keywords:SiC,BJT,電気的特性