Session information

^○（M1）Shota Nishida¹, Jianbo Liang¹, Tomohiro Hayashi¹, Masashi Morimoto¹, Naoteru Shigekawa¹, Manabu Arai² (Osaka City Univ.¹, New Japan Radio Co., Ltd.²)

2:15 PM - 2:30 PM

[18p-E5-5] Long-term stability of a commercially available SiC MOSFET

^○Masashi Minami¹ (PHNITEC¹)

2:30 PM - 2:45 PM

△ [18p-E5-6] Surface Morphologies of 4H-SiC Polar and Non-polar Substrates Treated by H₂-gas Etching

^○Takahiro Higashi¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (Kyoto Univ.¹)

Break 14:45〜15:00 (2:45 PM - 3:00 PM)

3:00 PM - 3:15 PM

△ [18p-E5-7] Relaxation behavior of threshold voltage shift under gate bias stress and suggestion of advanced measurement method

^○Mitsuru Sometani¹, Dai Okamoto¹, Shinsuke Harada¹, Hitoshi Ishimori¹, Shinji Takasu¹, Tetsuo Hatakeyama¹, Manabu Takei², Kazutoshi Kojima¹, Yoshiyuki Yonezawa¹, Kenji Fukuda¹, hajime Okumura¹ (AIST ADPERC¹, Fuji Electric²)

3:15 PM - 3:30 PM

△ [18p-E5-8] Characterization of interface states in SiC(11\overline{2}0) and (1\overline{1}00) MOS structures

^○Seiya Nakazawa¹, Takafumi Okuda¹, Takashi Nakamura², Tsunenobu Kimoto¹ (Kyoto Univ.¹, Rohm Co. Ltd.²)

3:30 PM - 3:45 PM

[18p-E5-9] Deep levels near the valence band in p-type 4H-SiC

^○Hiroki Nakane¹, Masashi Kato¹, Masaya Ichimura¹ (Nagoya Institute of Technology¹)

3:45 PM - 4:00 PM

[18p-E5-10] Evaluation of temperature dependence of surface recombination velocities in 4H-SiC

^○Kimihiro Kohama¹, Yuto Mori¹, Masashi Kato¹, Masaya Ichimura¹ (Nagoya Inst. of Tech¹)

4:00 PM - 4:15 PM

[18p-E5-11] Water splitting reaction on 4H-SiC surface: A first-principles analysis

Ryo Matsuoka¹, ^○Tsuruta Kenji¹, Kazuo Shinike¹ (Okayama Univ.¹)

▲

Session information

[18p-E5-1~11] 15.6 IV-group-based compounds

△ [18p-E5-1] Temperature Dependence of High-Current-Gain 4H-SiC(000-1) BJT

[18p-E5-2] Carrier mobility model for SiC-MOSFETs including Coulomb scattering by interface traps

[18p-E5-3] Effect of thermal process on the interface of n-Si/n-4H-SiC heterojunctions

△ [18p-E5-4] Annealing Characteristics of p+-Si/n-4H-SiC Junctions by Using Surface-Activated Bonding