The 61st JSAP Spring Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[18p-E5-1~11] 15.6 IV-group-based compounds

Tue. Mar 18, 2014 1:15 PM - 4:15 PM E5 (E105)

1:30 PM - 1:45 PM

[18p-E5-2] Carrier mobility model for SiC-MOSFETs including Coulomb scattering by interface traps

○Hiroki Noguchi1, Eiichi Murakami1, Yuu Sonoda1 (Kyusyu Sangyo University1)

Keywords:SiC-MOSFET,半導体