Characterization of interface states in SiC(11\overline{2}0) and (1\overline{1}00) MOS structures

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Tue. Mar 18, 2014 1:15 PM - 4:15 PM E5 (E105)

3:15 PM - 3:30 PM

^○Seiya Nakazawa¹, Takafumi Okuda¹, Takashi Nakamura², Tsunenobu Kimoto¹ (Kyoto Univ.¹, Rohm Co. Ltd.²)

Keywords:SiC,MOS,コンダクタンス法