[18p-F6-1~20] 15.5 IV-group crystals and IV-IV-group mixed crystals

[18p-F6-1] Formation of Ge dots on Si substrate by annealing amorphous Ge/C structure

^○Shinji Hatakeyama¹, Yuhki Itoh¹, Hayate Okuno², Tomoyuki Kawashima^1,2, Katsuyoshi Washio^1,2 (Tohoku Univ.¹, Tohoku Univ.²)

Keywords:Ge,量子ドット,QD