Poster presentation

[17a-PG2-1~5] 15.5 IV-group crystals and IV-IV-group mixed crystals

Mon. Mar 17, 2014 9:30 AM - 11:30 AM PG2 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[17a-PG2-1] Influence of Cap-Si thickness on Interface State Density and Hole Mobility of p-MOSFETs with Cap-Si/Strained-SiGe Channel/Si(110) Heterostructures

^○Tomoyuki Obata¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Kentaro Sawano² (CCST Univ. of Yamanashi¹, ARL Tokyo City Univ²)

9:30 AM - 11:30 AM

[17a-PG2-2] Application of carbon composition grading to compressively strained-Si/Si_1-XC_X/Si(100) heterostructures and its effect on the electrical characteristics

^○Syoichiro Sakai¹, Hiroshi Furukawa¹, Keisuke Arimoto¹, Junzi Yamanaka¹, Kiyokazu Nakagawa¹, Noritaka Usami², Yusuke Hoshi², Kentaro Sawano³ (CCST of Univ. of Yamanashi¹, Nagoya Univ.², ARL Tokyo City Univ.³)

9:30 AM - 11:30 AM

[17a-PG2-3] Influence of ion implantation and thermal process on crystallinity of Si1-xCx

Fujiwara Kosuke¹, Sakai Shoichiro¹, Furukawa Hiroshi¹, Inoue Shigenori¹, ^○Arimoto Keisuke¹, Yamanaka Junji¹, Nakagawa Kiyokazu¹, Usami Noritaka², Hoshi Yusuke², Sawano Kentarou³ (CCST Univ. of Yamanashi¹, Nagoya Univ.², ARL Tokyo City Univ.³)

9:30 AM - 11:30 AM

[17a-PG2-4] Effect of ion implantation technique on crystalline defects developed during the growths of Si1-xCx/Si(001) structures

Nakagomi Ryo¹, Sakai Shoichiro¹, Fujiwara Kosuke¹, Furukawa Hiroshi¹, ^○Arimoto Keisuke¹, Yamanaka Junji¹, Nakagawa Kiyokazu¹, Usami Noritaka², Hoshi Yusuke², Sawano Kentarou³ (CCST Univ. of Yamanashi¹, Nagoya Univ.², ARL Tokyo City Univ.³)

9:30 AM - 11:30 AM

▲ [17a-PG2-5] Thermoelectric properties of Ga doped SiGe bulk crystal

^○（DC）Omprakash Muthusamy¹, Arivanandhan Mukannan¹, Anandan Pandurangan¹, Hisashi Morii¹, Toru Aoki¹, Tadanobu Koyama¹, Yoshimi Momose¹, Hiroya Ikeda¹, Hirokazu Tatsuoka¹, Yasunori Okano², Tetsuo Ozawa³, Yuko Inatomi⁴, Moorthy Babu Sridharan⁵, Yasuhiro Hayakawa¹ (RIE Shizuoka Univ.¹, Osaka Univ.², Shizuoka Insti Sci. and Tech.³, JAXA⁴, Anna Univ.⁵)

Oral presentation

[18a-F6-1~12] 15.5 IV-group crystals and IV-IV-group mixed crystals

Tue. Mar 18, 2014 9:00 AM - 12:15 PM F6 (F306)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-F6-1] Low-temperature formation of crystalline Ge thin films on insulating substrates by Al-induced layer exchange growth

^○Ryohei Numata¹, Kaoru Toko¹, Naoki Oya¹, Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. of Tsukuba¹, Nagoya Univ.², JST-CREST³)

9:15 AM - 9:30 AM

[18a-F6-2] Al-induced crystallization of amorphous-Ge thin films on plastic substrates

^○Naoki Oya¹, Kaoru Toko¹, Ryohei Numata¹, Koki Nakazawa¹, Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. of Tsukuba¹, Nagoya Univ², JST-CREST³)

9:30 AM - 9:45 AM

[18a-F6-3] Effects of diffusion control interlayer on polycrystalline Ge/Al/glass structures formed by inverted Al-induced crystallization

^○Koki Nakazawa¹, Kaoru Toko¹, Noritaka Usami², Takashi Suemasu¹ (Univ. of Tsukuba¹, Nagoya Univ.²)

9:45 AM - 10:00 AM

△ [18a-F6-4] Direct-Formation of Large-Grain Ge on Plastic Sheet by Layer-Exchange Crystallization

^○Jonghyeok Park^1,2, Kenji Kasahara¹, Kohei Hamaya¹, Masanobu Miyao¹, Taizoh Sadoh¹ (Kyushu Univ.¹, JSPS Research Fellow²)

10:00 AM - 10:15 AM

[18a-F6-5] Lateral solid phase crystallization (> 50 um) of GeSn on glass substrate -Low temperature (< 250oC) formation of nuclei by Sn melting-

^○Hirnorori Chikita¹, Ryo Matsumuta¹, Yuki Kinoshita¹, Taizoh Sadoh¹, Masanobu Miyao¹ (Kyushu University¹)

10:15 AM - 10:30 AM

[18a-F6-6] Self-organized formation of Sn dots on glass substrate -Lateral solid phase crystallization by lithography-less process-

^○Ryo Matsumura¹, Hironori Chikita¹, Taizoh Sadoh¹, Masanobu Miyao¹ (Dept. Electronics, Kyushu Univ.¹)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[18a-F6-7] Formation of Large Grain Ge(Sn) by Liquid-Solid Coexisting Annealing of a-GeSn on Insulator Structure -Effects of initial Sn concentration on morphology-

^○Yuki Kai¹, Hironori Chikita¹, Ryo Matsumura¹, Taizo Sadoh¹, Masanobu Miyao¹ (Kyushu Univ.¹)

11:00 AM - 11:15 AM

[18a-F6-8] Solid-Phase Epitaxy of a-GeSn/c-Ge at Low Temperatures

^○Akira Ooato¹, J.-H Park^1,2, Masanobu Miyao¹, Taizoh Sadoh¹ (Kyushu Univ¹, JSPS Research Fellow²)

11:15 AM - 11:30 AM

△ [18a-F6-9] Electrical characteristics of Ge-on-insulator MOSFETs fabricated by lateral liquid-phase epitaxy on Y2O3 BOX layer

^○Keiko Kajimura¹, Masahiro Matsue¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

11:30 AM - 11:45 AM

[18a-F6-10] Enhancement of direct transition luminescence of n-type doped Ge-on-insulator layer fabricated by lateral liquid-phase epitaxy

^○Keiko Kajimura¹, Masahiro Matsue¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

11:45 AM - 12:00 PM

[18a-F6-11] Preferred crystal orientation of local GeSn-on-insulator layers fabricated by lateral liquid-phase epitaxy

^○Kohei Tominaga¹, Masahiro Matsue¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

12:00 PM - 12:15 PM

△ [18a-F6-12] Evaluation of bandgap modulation in GeSn-on-insulator structures fabricated by lateral liquid-phase epitaxy

^○Kohei Tominga¹, Masahiro Matsue¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (Osaka Univ.¹)

Oral presentation

[18p-F6-1~20] 15.5 IV-group crystals and IV-IV-group mixed crystals

Tue. Mar 18, 2014 1:30 PM - 6:45 PM F6 (F306)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:15〜13:30 （12:15 PM - 1:30 PM）

1:30 PM - 1:45 PM

[18p-F6-1] Formation of Ge dots on Si substrate by annealing amorphous Ge/C structure

^○Shinji Hatakeyama¹, Yuhki Itoh¹, Hayate Okuno², Tomoyuki Kawashima^1,2, Katsuyoshi Washio^1,2 (Tohoku Univ.¹, Tohoku Univ.²)

1:45 PM - 2:00 PM

[18p-F6-2] Suppression of intermixing in Ge/Si system by interfacial sub-monolayer carbon

^○Yuhki Itoh¹, Ryo Hayase², Hatakeyama Shinji¹, Tomoyuki Kawashima^1,2, Katsuyoshi Washio^1,2 (Tohoku Univ.¹, Tohoku Univ.²)

2:00 PM - 2:15 PM

[18p-F6-3] Low-temperature growth of Ge thin films on Si(100) substrate

^○Ryo Hayase¹, Yuhki Itoh², Tomoyuki Kawashima^1,2, Katsuyoshi Washio^1,2 (Tohoku Univ.¹, Tohoku Univ.²)

2:15 PM - 2:30 PM

△ [18p-F6-4] Ge Epitaxial Growth using Metal Organic Chemical Vapor Deposition

^○Kohei Suda¹, Seiya Ishihara¹, Hideaki Machida², Masato Ishikawa², Hiroshi Sudoh², Yoshio Ohshita³, Atsushi Ogura¹ (Meiji Univ.¹, Gas-phase Growth², Toyota Technological Inst.³)

2:30 PM - 2:45 PM

[18p-F6-5] Mn δ doping into Si : characterization of career transport

^○Koichi Murata^1,2, Satoshi Tsubomatsu^1,2, Takashi Kanazawa^1,2, Tamotsu Koyano², Koh-ichi Nittoh¹, Kazushi Miki^1,2 (NIMS¹, Univ. of Tsukuba²)

2:45 PM - 3:00 PM

[18p-F6-6] Formation of ultrashallow Ohmic contact on n-type Ge by P delta-doping

^○Mchihiro Yamada¹, Yoshihiro Takeuchi², Kentarou Sawano², M. Kohei Itoh¹ (Keio Univ.¹, Tokyo City Univ.²)

3:00 PM - 3:15 PM

[18p-F6-7] Low temperature formation of Ge nanodots using Bi as a surfactant

^○Hiroshi Okamoto¹, Kazuki Hayashi¹, Yumika Kobayashi¹, Takehiko Tawara², Kouta Tateno², Guoqiang Zhang², Hideki Gotoh² (Hirosaki Univ.¹, NTT Basic Res. Labs.²)

3:15 PM - 3:30 PM

[18p-F6-8] Fabrication of solar cells by coupling photonic nanostructures with textured substrates

^○Yusuke Hoshi¹, Osamu Aonuma¹, Takeshi Tayagaki², Noritaka Usami¹ (Nagoya Univ.¹, Kyoto Univ.²)

3:30 PM - 3:45 PM

△ [18p-F6-9] First principles analysis on stability of IV element dopant in Ge crystal for solar cells

^○（M1）Ryo Matsutani¹, Koji Sueoka¹, Eiji Kamiyama¹ (Graduate School of Okayama Pref. Univ.¹)

3:45 PM - 4:00 PM

[18p-F6-10] Fabrication and optical properties of colloidal Si_1-xGe_x nanocrystals

^○Takashi Kanno¹, Hiroshi Sugimoto¹, Kenji Imakita¹, Minoru Fujii¹ (Kobe Univ.¹)

Break 16:00〜16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[18p-F6-11] TOF-SIMS measurement of Ge directly grown on Si substrate

^○Kenichiro KONO¹, Sungbong Park², Yasuhiko Ishikawa², Kazumi Wada² (NIMS, QBU¹, Univ. of Tokyo,²)

4:30 PM - 4:45 PM

[18p-F6-12] Electrical characterization of wafer-bonded GeOI substrates with inserted Al₂O₃ layers

^○Keisuke Yoshida¹, Yoshiaki Nakamura¹, Shotaro Takeuchi¹, Yoshihiko Moriyama^1,2, Tsutomu Tezuka², Akira Sakai¹ (Osaka Univ.¹, GNC-AIST²)

4:45 PM - 5:00 PM

△ [18p-F6-13] Low-Temperature Cryastallization of SiGe Multilayer by Soft X-ray Irradiation

^○（M1）Fumito Kusakabe¹, Yuki Maruyama¹, Akira Heya¹, Naoto Matsuo¹, Kazuhiro Kanda², Takayasu Mochizuki², Kazuhiro Ito³, Makoto Takahashi³ (Univ. of Hyogo¹, LASTI Univ. of Hyogo², Osaka Univ³)

5:00 PM - 5:15 PM

△ [18p-F6-14] Characterization of Local Strain in Embedded Ge_1−xSn_x/Ge Fine Structures by using X-ray Microdiffraction Measurement

^○Shinichi Ike¹, Yoshihiko Moriyama², Masashi Kurosawa^1,3, Noriyuki Taoka¹, Osamu Nakatsuka¹, Yasuhiko Imai⁴, Shigeru Kimura⁴, Tsutomu Tezuka², Shigeaki Zaima¹ (Nagoya Univ.¹, AIST-GNC², JSPS Research Fellow (PD)³, JASRI⁴)

5:15 PM - 5:30 PM

△ [18p-F6-15] Ultra-low-temperature epitaxial growth of SiGeSn thin-films by using preferential melting of Ge atoms into liquid-Sn

^○Motohiro Kato¹, Masashi Kurosawa^1,2, Takashi Yamaha¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS²)

5:30 PM - 5:45 PM

[18p-F6-16] Suppression of Sn-droplet by Si-incorporation and its application for layer exchange growth

^○Masashi Kurosawa^1,2, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS²)

5:45 PM - 6:00 PM

△ [18p-F6-17] Sn content dependence of I-V characteristics of n-channel Ge_1-xSn_x MOSFETs

^○Takanori Asano¹, Noriyuki Taoka¹, Kimihiko Kato¹, Mitsuo Sakashita¹, Rui Zhang², Masafumi Yokoyama², Mitsuru Takenaka², Shinichi Takagi², Shigeaki Zaima¹ (Nagoya Univ.¹, The Univ. of Tokyo²)

6:00 PM - 6:15 PM

△ [18p-F6-18] Crystalline Structure of Ge_1-x-ySn_xC_y Ternary Alloy Layers Formed by Solid Phase Epitaxy

^○Hiroki Oda¹, Takashi Yamaha¹, Kengo Terasawa¹, Masashi Kurosawa^1,2, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹, JSPS Research Fellow (PD)²)

6:15 PM - 6:30 PM

△ [18p-F6-19] Crystalline Growth and Characterization of High C Content Ge_1-x-ySn_xC_y Layers

^○Takashi Yamaha¹, Kengo Terasawa¹, Masashi Kurosawa^1,2, Wakana Takaeuchi¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Graduate School of Eng., Nagoya Univ.¹, JSPS Research Fellow (PD)²)

6:30 PM - 6:45 PM

[18p-F6-20] Influence of Growth and Annealing Temperature on Crystalline Structure of Ge_1-x-ySi_xSn_y Epitaxial Layers

^○Tatsuya Terashima¹, Takashi Yamaha¹, Takanori Asano¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹)

Sessions

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

[17a-PG2-1~5] 15.5 IV-group crystals and IV-IV-group mixed crystals

▲ [17a-PG2-5] Thermoelectric properties of Ga doped SiGe bulk crystal

[18a-F6-1~12] 15.5 IV-group crystals and IV-IV-group mixed crystals

△ [18a-F6-4] Direct-Formation of Large-Grain Ge on Plastic Sheet by Layer-Exchange Crystallization

△ [18a-F6-9] Electrical characteristics of Ge-on-insulator MOSFETs fabricated by lateral liquid-phase epitaxy on Y2O3 BOX layer

△ [18a-F6-12] Evaluation of bandgap modulation in GeSn-on-insulator structures fabricated by lateral liquid-phase epitaxy

[18p-F6-1~20] 15.5 IV-group crystals and IV-IV-group mixed crystals

△ [18p-F6-4] Ge Epitaxial Growth using Metal Organic Chemical Vapor Deposition

△ [18p-F6-9] First principles analysis on stability of IV element dopant in Ge crystal for solar cells

△ [18p-F6-13] Low-Temperature Cryastallization of SiGe Multilayer by Soft X-ray Irradiation

△ [18p-F6-14] Characterization of Local Strain in Embedded Ge1−xSnx/Ge Fine Structures by using X-ray Microdiffraction Measurement

△ [18p-F6-15] Ultra-low-temperature epitaxial growth of SiGeSn thin-films by using preferential melting of Ge atoms into liquid-Sn

△ [18p-F6-17] Sn content dependence of I-V characteristics of n-channel Ge1-xSnx MOSFETs

△ [18p-F6-18] Crystalline Structure of Ge1-x-ySnxCy Ternary Alloy Layers Formed by Solid Phase Epitaxy

△ [18p-F6-19] Crystalline Growth and Characterization of High C Content Ge1-x-ySnxCy Layers

△ [18p-F6-14] Characterization of Local Strain in Embedded Ge_1−xSn_x/Ge Fine Structures by using X-ray Microdiffraction Measurement

△ [18p-F6-17] Sn content dependence of I-V characteristics of n-channel Ge_1-xSn_x MOSFETs

△ [18p-F6-18] Crystalline Structure of Ge_1-x-ySn_xC_y Ternary Alloy Layers Formed by Solid Phase Epitaxy

△ [18p-F6-19] Crystalline Growth and Characterization of High C Content Ge_1-x-ySn_xC_y Layers