[18p-F6-1~20] 15.5 IV-group crystals and IV-IV-group mixed crystals

△ [18p-F6-17] Sn content dependence of I-V characteristics of n-channel Ge_1-xSn_x MOSFETs

^○Takanori Asano¹, Noriyuki Taoka¹, Kimihiko Kato¹, Mitsuo Sakashita¹, Rui Zhang², Masafumi Yokoyama², Mitsuru Takenaka², Shinichi Takagi², Shigeaki Zaima¹ (Nagoya Univ.¹, The Univ. of Tokyo²)

Keywords:ゲルマニウムスズ,MOSFET