Room-temperature operation of GaAs<sub>1-x</sub>Bi<sub>x</sub> laser diode grown by molecular beam epitaxy

Presentation information

Oral presentation

05. Optoelectronics » 5.1 Semiconductor laser, Light emitter / Photodetector

Tue. Mar 18, 2014 2:00 PM - 6:15 PM F9 (F401)

2:00 PM - 2:15 PM

^○（D）Takuma Fuyuki¹, Kenji Yoshida¹, Ryo Yoshioka¹, Masahiro Yoshimoto¹ (Kyoto Inst. Tech.¹)

Keywords:GaAsBi,Laser,分子線エピタキシー