Oral presentation

[18a-F9-1~10] 5.1 Semiconductor laser, Light emitter / Photodetector

Tue. Mar 18, 2014 9:30 AM - 12:15 PM F9 (F401)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[18a-F9-1] Improvement in dark current characteristics of c-Se based heterojunction photodiodes

^○Shigeyuki Imura¹, Kenji Kikuchi¹, Kazunori Miyakawa¹, Hiroshi Ohtake¹, Misao Kubota¹ (NHK STRL¹)

9:45 AM - 10:00 AM

[18a-F9-2] Sub-10 GHz Responses of Si PIN PDs Fabricated by CMOS Compatible Process

^○Gen Li¹, Kazuaki Maekita¹, Takeo Maruyama¹, Koichi Iiyama¹ (Kanazawa Univ.¹)

10:00 AM - 10:15 AM

[18a-F9-3] Reduction of after-pulse in APD single-photon detector with low-pass filter

Setsu Jyo¹, ^○Kyo Inoue¹ (Osaka Univ.¹)

10:15 AM - 10:30 AM

[18a-F9-4] High responsivity of compact coherent receiver using the InP-based integrated chip with spot-size converters and photodiode waveguides

^○Naoko Inoue¹, Hideki Yagi¹, Takehiko Kikuchi¹, Ryuji Masuyama¹, Tomokazu Katsuyama¹, Yoshihiro Yoneda¹, Hajime Syoji¹ (Sumitomo Electric Industries¹)

10:30 AM - 10:45 AM

[18a-F9-5] Improved Specific Detectivity of QDIP with AlGaAs Proximity Barriers

^○Sota Kagami^1,2, Yuichi Igarashi^1,2, Daisuke Shirasawa¹, Katsuyuki Watanabe², Masayuki Shirane^1,2, Shunsuke Ohkouchi², Shinichi Yorozu^1,2, Yasuhiko Arakawa^2,3 (NEC Corporation¹, NanoQuine², IIS the Univ. of Tokyo³)

Break 10:45〜11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[18a-F9-6] Two-color Detection in a Charge Sensitive Infrared Phototransistor (CSIP)

^○Sunmi Kim¹, Susumu Komiyama², Takeji Ueda², Takeshi Satoh², Yusuke Kajihara¹ (IIS, Univ. of Tokyo¹, Dept. Basic Sci., Univ. of Tokyo²)

11:15 AM - 11:30 AM

[18a-F9-7] LED imaging by Laser Terahertz Emission Microscopy

^○Yuji Sakai¹, Akira Ito², Hidetoshi Nakanishi², Iwao Kawayama¹, Hironaru Murakami¹, Masayoshi Tonouchi¹ (ILE, Osaka Univ.¹, Dainippon Screen Mfg. Co., Ltd.²)

11:30 AM - 11:45 AM

[18a-F9-8] Femto-Second Optical Pulse Response of 1550nm-Band Multi-Stacked QD-SOA

^○Atsushi Matsumoto¹, Yuki Takei¹, Asuka Matsushita¹, Kouichi Akahane², Yuichi Matsushima³, Katsuyuki Utaka¹ (Waseda Univ.¹, NICT², Waseda Univ.³)

11:45 AM - 12:00 PM

[18a-F9-9] Characteristic of the Frequency Noises in Semiconductor Optical Amplifier

Kazuki Higuchi¹, ^○（B）Takayoshi Takashima¹, Minoru Yamada¹, Yuji Kuwamura¹ (Kanazawa Univ.¹)

12:00 PM - 12:15 PM

[18a-F9-10] Influence of the optical amplifier to noise characteristics in the integrated semiconductor laser

Yoshihiro Umeda¹, Noriyuki Oomae¹, jiqiang Xiu¹, ^○（M1）Kazuki Higuchi¹, Yuji Kuwamura¹, Minoru Yamada¹ (Kanazawa Univ.¹)

Oral presentation

[18p-F9-1~16] 5.1 Semiconductor laser, Light emitter / Photodetector

Tue. Mar 18, 2014 2:00 PM - 6:15 PM F9 (F401)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 12:15〜14:00 （12:15 PM - 2:00 PM）

2:00 PM - 2:15 PM

△ [18p-F9-1] Room-temperature operation of GaAs_1-xBi_x laser diode grown by molecular beam epitaxy

^○（D）Takuma Fuyuki¹, Kenji Yoshida¹, Ryo Yoshioka¹, Masahiro Yoshimoto¹ (Kyoto Inst. Tech.¹)

2:15 PM - 2:30 PM

△ [18p-F9-2] Asymmetric Ridge-Type Semiconductor Laser with Partial Insulating Cladding Layer

^○（M1）Mitsunori Oshima¹, Takahiro Numai¹ (Grad. School of Sci. & Eng., Ritsumeikan Univ.¹)

2:30 PM - 2:45 PM

△ [18p-F9-3] The Ridge-Type Semiconductor Laser with the Diffraction Gratings along the Transversal Axis and Partial Insulating Cladding Layer ―Dependence on the Order of Diffraction Gratings―

^○（M1）Takuya Hirasaki¹, Takahiro Numai¹ (Ritsumeikan Univ.¹)

2:45 PM - 3:00 PM

[18p-F9-4] Stability of Longitudinal Mode in External Cavity Quantum Dot Lasers

^○Nami Yasuoka¹, Mitsuru Ishida², Masaomi Yamaguchi², Mitsuru Ekawa², Tsuyoshi Yamamoto², Mitsuru Sugawara³, Yasuhiko Arakawa¹ (INQIE,Univ.of Tokyo¹, Fujitsu Labs.², QD Laser³)

3:00 PM - 3:15 PM

[18p-F9-5] 25 Gb/s directly-modulated DFB laser with lateral pn-junction fabricated by ion implantation and thermal diffusion

^○Koichi Hasebe¹, Koji Takeda¹, Takuro Fujii¹, Tomonari Sato¹, Takaaki Kakitsuka¹, Shinji Matsuo¹ (NTT¹)

3:15 PM - 3:30 PM

[18p-F9-6] Electroluminescence in Ultrathin Siliconn-on-Insulator Metal-Oxide-Semiconductor Tunnel Diodes

^○Yasunori Nakamukai¹, Yuki Miyata¹, Kentaro Kawai¹, Kenta Arima¹, Mizuho Morita¹, Ayano Tsuchida¹ (Osaka Univ.¹)

3:30 PM - 3:45 PM

[18p-F9-7] Enhanced photoluminescence from Ge passivated with spin-on dopants

^○Akane Osawa^1,2, Yuhsuke Yasutake^1,3, Susumu Fukatsu¹ (The University of Tokyo¹, Yokohama Futaba Junior and Senior High School², JST PRESTO³)

3:45 PM - 4:00 PM

[18p-F9-8] InAs/GaAs Quantum Dot Lasers on SOI Waveguide Structures

^○Katsuaki Tanabe^1,2, Yasuhiko Arakawa^1,2,3 (NanoQuine, Univ. Tokyo¹, PECST², IIS, Univ. Tokyo³)

Break 16:00〜16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

▲ [18p-F9-9] Electrically Pumped InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrate by Metal-Stripe Wafer Bonding

^○YuanHsuan Jhang¹, Katsuaki Tanabe², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (IIS, Univ. of Tokyo¹, NanoQuine, Univ. of Tokyo²)

4:30 PM - 4:45 PM

△ [18p-F9-10] Lateral Current Injection Type GaInAsP/InP Membrane Laser on Si Substrate

^○Daisuke Inoue¹, Jieun Lee¹, Kyohei Doi¹, Takuo Hiratani¹, Yuki Atsuji¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,2 (Dept. of Elecrical and Electronic Engineering¹, Quantum Nanoelectronics Research Center²)

4:45 PM - 5:00 PM

[18p-F9-11] Study of mid-IR quantum cascade laser for low power consumption

^○Hiroyuki Yoshinaga¹, Hiroki Mori¹, Jun-ichi Hashimoto¹, Yukihiro Tsuji¹, Makoto Murata¹, Toshiyuki Tanahashi¹, Tsukuru Katsuyama¹ (Sumitomo Electric Industries, LTD.¹)

5:00 PM - 5:15 PM

[18p-F9-12] AnalysisElectric potential and carrier density of band structure of AlGaAs distributed Bragg reflector with sinusoidal compositional structure.

^○Naoki Manabe¹, Satoshi Shimomura¹ (Ehime Univ.¹)

5:15 PM - 5:30 PM

▲ [18p-F9-13] Lasing Characteristic of InGaAs Circular-Grating-Coupled Surface Emitting Laser with Focusing Function

Ashim Saha¹, ^○Masahiro Uemukai¹, Toshiaki Suhara¹ (Osaka Univ.¹)

5:30 PM - 5:45 PM

△ [18p-F9-14] The transverse mode control of tunable VCSELs with sub-wavelength grating

^○（M1）Shunya Inoue¹, Fumio Koyama¹ (P&I Lab., Tokyo Tech.¹)

5:45 PM - 6:00 PM

▲ [18p-F9-15] 27 GHz Directly Modulated Transverse Coupled Cavity VCSEL by Utilizing the Photon-Photon Resonance

^oHamed Dalir¹, Fumio Koyama¹ (Tokyo Institute of Technology)

6:00 PM - 6:15 PM

▲ [18p-F9-16] Strong Lateral Coupling from VCSEL to Slow Light Waveguide by Width Modification

^oHamed Dalir¹, Yuta Takahashi¹, Toshikazu Shimada¹, Fumio Koyama¹ (Tokyo Institute of Technology)

Sessions

05. Optoelectronics » 5.1 Semiconductor laser, Light emitter / Photodetector

[18a-F9-1~10] 5.1 Semiconductor laser, Light emitter / Photodetector

[18a-F9-1] Improvement in dark current characteristics of c-Se based heterojunction photodiodes

[18a-F9-2] Sub-10 GHz Responses of Si PIN PDs Fabricated by CMOS Compatible Process

[18a-F9-3] Reduction of after-pulse in APD single-photon detector with low-pass filter

[18a-F9-4] High responsivity of compact coherent receiver using the InP-based integrated chip with spot-size converters and photodiode waveguides

[18a-F9-5] Improved Specific Detectivity of QDIP with AlGaAs Proximity Barriers

[18a-F9-6] Two-color Detection in a Charge Sensitive Infrared Phototransistor (CSIP)

[18a-F9-7] LED imaging by Laser Terahertz Emission Microscopy

[18a-F9-8] Femto-Second Optical Pulse Response of 1550nm-Band Multi-Stacked QD-SOA

[18a-F9-9] Characteristic of the Frequency Noises in Semiconductor Optical Amplifier

[18a-F9-10] Influence of the optical amplifier to noise characteristics in the integrated semiconductor laser

[18p-F9-1~16] 5.1 Semiconductor laser, Light emitter / Photodetector

△ [18p-F9-1] Room-temperature operation of GaAs_1-xBi_x laser diode grown by molecular beam epitaxy

△ [18p-F9-2] Asymmetric Ridge-Type Semiconductor Laser with Partial Insulating Cladding Layer

△ [18p-F9-3] The Ridge-Type Semiconductor Laser with the Diffraction Gratings along the Transversal Axis and Partial Insulating Cladding Layer ―Dependence on the Order of Diffraction Gratings―

[18p-F9-4] Stability of Longitudinal Mode in External Cavity Quantum Dot Lasers

[18p-F9-5] 25 Gb/s directly-modulated DFB laser with lateral pn-junction fabricated by ion implantation and thermal diffusion

[18p-F9-6] Electroluminescence in Ultrathin Siliconn-on-Insulator Metal-Oxide-Semiconductor Tunnel Diodes

[18p-F9-7] Enhanced photoluminescence from Ge passivated with spin-on dopants

[18p-F9-8] InAs/GaAs Quantum Dot Lasers on SOI Waveguide Structures

▲ [18p-F9-9] Electrically Pumped InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrate by Metal-Stripe Wafer Bonding

△ [18p-F9-10] Lateral Current Injection Type GaInAsP/InP Membrane Laser on Si Substrate

[18p-F9-11] Study of mid-IR quantum cascade laser for low power consumption

[18p-F9-12] AnalysisElectric potential and carrier density of band structure of AlGaAs distributed Bragg reflector with sinusoidal compositional structure.

▲ [18p-F9-13] Lasing Characteristic of InGaAs Circular-Grating-Coupled Surface Emitting Laser with Focusing Function

△ [18p-F9-14] The transverse mode control of tunable VCSELs with sub-wavelength grating

▲ [18p-F9-15] 27 GHz Directly Modulated Transverse Coupled Cavity VCSEL by Utilizing the Photon-Photon Resonance

▲ [18p-F9-16] Strong Lateral Coupling from VCSEL to Slow Light Waveguide by Width Modification

Sessions

05. Optoelectronics » 5.1 Semiconductor laser, Light emitter / Photodetector

[18a-F9-1~10] 5.1 Semiconductor laser, Light emitter / Photodetector

[18p-F9-1~16] 5.1 Semiconductor laser, Light emitter / Photodetector

△ [18p-F9-1] Room-temperature operation of GaAs1-xBix laser diode grown by molecular beam epitaxy

△ [18p-F9-2] Asymmetric Ridge-Type Semiconductor Laser with Partial Insulating Cladding Layer

△ [18p-F9-3] The Ridge-Type Semiconductor Laser with the Diffraction Gratings along the Transversal Axis and Partial Insulating Cladding Layer ―Dependence on the Order of Diffraction Gratings―

▲ [18p-F9-9] Electrically Pumped InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrate by Metal-Stripe Wafer Bonding

△ [18p-F9-10] Lateral Current Injection Type GaInAsP/InP Membrane Laser on Si Substrate

▲ [18p-F9-13] Lasing Characteristic of InGaAs Circular-Grating-Coupled Surface Emitting Laser with Focusing Function

△ [18p-F9-14] The transverse mode control of tunable VCSELs with sub-wavelength grating

▲ [18p-F9-15] 27 GHz Directly Modulated Transverse Coupled Cavity VCSEL by Utilizing the Photon-Photon Resonance

▲ [18p-F9-16] Strong Lateral Coupling from VCSEL to Slow Light Waveguide by Width Modification

△ [18p-F9-1] Room-temperature operation of GaAs_1-xBi_x laser diode grown by molecular beam epitaxy