[18p-PA12-1~10] 13.4 Devices/Integration Technologies

△ [18p-PA12-5] Ultra-thin body Ge-on insulator nMOSFETs by Ge condensation and Sb-diffused source/drain

^○WuKang Kim^{1, 2}, YoungHyun Kim^{1, 2}, SangHyeon Kim^{1, 2}, Takenori Osada³, MAsahiko Hata³, Mitsuru Takenaka^{1, 2}, Shinichi Takagi^{1, 2} (The University of Tokyo¹, JST-CREST², Sumitomo Chemical³)

Keywords:Ge MOSFET,Ge condensation,Solid phase diffusion