[18p-PA12-1~10] 13.4 Devices/Integration Technologies

[18p-PA12-6] Triangular InGaAs-OI nMOSFET with high mobility (111)B surfaces

^○Toshifumi Irisawa¹, Minoru Oda¹, Keiji Ikeda¹, Yoshihiko Moriyama¹, Eiko Mieda¹, Jevaswan Wipakorn¹, Tatsurou Maeda¹, Osamu Ichikawa², Takenori Osada², Yasuyuki Miyamoto³, Masahiko Hata², Tsutomu Tezuka¹ (AIST-GNC¹, Sumitomo Cemical Co. Ltd², T.I.Tech.³)

Keywords:InGaAs-OI,Multi-gate,MOSFET