[18p-PG3-1~19] 14.3 Electron devices and Process technology

[18p-PG3-14] Effect of Annealing on Contact properies with TiB₂ Electrodes on AlGaN/GaN

^○Mari Okamoto¹, Yoshihiro Matsukawa¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori², Wataru Saito³, Hiromichi Ohashi¹, Hiroshi Iwai¹ (Tokyo Tech.FRC¹, Tokyo Tech.IGSSE², Toshiba³)

Keywords:GaN, コンタクト