[18p-PG3-1~19] 14.3 Electron devices and Process technology

[18p-PG3-15] The possibility for low-resistive contacts formation on AlGaN/GaN high electron mobility transistors by introducing uneven AlGaN layers

^○Masayuki Kamiya¹, Yusuke Takei¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Kazuo Tsutsui¹, Hiroshi Iwai¹ (Tokyo Tech.¹, Toshiba²)

Keywords:AlGaN,オーミックコンタクト,凹凸