[18p-PG3-1~19] 14.3 Electron devices and Process technology

[18p-PG3-16] Investigation into scaling law in AlGaN/GaN Fin field effect transistors by device simulation

^○Minjae Yoon¹, Kazuma Terayama¹, Akira Nakajima², Shinichi Nishizawa², Hiromichi Ohasi², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹ (Tokyo Tech.¹, AIST²)

Keywords:GaN Power Device,Simulation,FinFET