[18p-PG6-1~15] 15.3 III-V-group epitaxial crystals

▲ [18p-PG6-13] Recombination center in p-GaAsN grown by chemical beam epitaxy

Hiroyuki Kowaki¹, ^○（D）Omar Elleuch¹, Kazuma Ikeda¹, Boussairi Bouzazi¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (Toyota Technological Institute¹, Toyota Technological Institute², Toyota Technological Institute³, Toyota Technological Institute⁴, Toyota Technological Institute⁵, Toyota Technological Institute⁶, Toyota Technological Institute⁷)

Keywords:GaAsN, chemical beam epitaxy,GaAsN, chemical beam epitaxy,GaAsN, chemical beam epitaxy