[18p-PG6-1~15] 15.3 III-V-group epitaxial crystals

▲ [18p-PG6-12] Study of high background doping in p-type GaAsN grown by chemical beam epitaxy

^○（D）Omar Elleuch¹, Hiroyuki Kowaki¹, Boussairi Bouzazi¹, Kazuma Ikeda¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Masafumi Yamaguchi¹ (Toyota Technological Institute¹, Toyota Technological Institute², Toyota Technological Institute³, Toyota Technological Institute⁴, Toyota Technological Institute⁵, Toyota Technological Institute⁶, Toyota Technological Institute⁷)

Keywords:GaAsN, chemical beam epitaxy,GaAsN, chemical beam epitaxy,GaAsN, chemical beam epitaxy