[18p-PG6-1~15] 15.3 III-V-group epitaxial crystals

[18p-PG6-11] In composition dependence of dislocation formation processes of initial growth in InGaAs/GaAs thin film using reciprocal space mapping

^○Jun Takahira¹, Rin Kei¹, Hidetoshi Suzuki¹, Kouji Maeda¹, Tetsuo Ikari¹ (Miyazaki Univ.¹)

Keywords:分子線エピタキシー