A GaN HEMT fine gate process by an i-line stepper

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D8 (D215)

11:45 AM - 12:00 PM

^○Hiroyuki Ichikawa¹, Chihoko Mizue¹, Isao Makabe¹, Yasunori Tateno¹, Ken Nakata¹, Kazutaka Inoue¹ (Sumitomo Electric Industries, Ltd.¹)

Keywords:GaN,HEMT