[19a-D8-1~13] 14.3 Electron devices and Process technology

[19a-D8-13] Suppression of self-heating effect in AlGaN/GaN HEMTs by transfer to a copper plate using layered BN as a release layer

^○Masanobu Hiroki¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (NTT BRL¹)

Keywords:GaN,HEMT,Transfer