The 61st JSAP Spring Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19a-D8-1~13] 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D8 (D215)

9:15 AM - 9:30 AM

[19a-D8-2] Investigation on the vertical buffer leakage current using AlGaN/GaN HEMTs on GaN substrates

○Shinichi Tanabe1, Noriyuki Watanabe1, Masahiro Uchida2, Takashi Fukada3, Kazumasa Kiyomi3, Hideaki Matsuzaki1 (NTT Photonics Labs.1, NTT-AT2, Mitsubishi Chemical3)

Keywords:GaN