Analysis of transient characteristics of GaN HEMT using Field Plate which applies voltage independently

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D8 (D215)

9:45 AM - 10:00 AM

^○Suguru Mase¹, Akio Wakejima¹, Takashi Egawa¹ (Nagoya Institute of Technology¹)

Keywords:GaN,HEMT,過渡特性