Selective dry-etching technologies for normally-off GaN HEMTs

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D8 (D215)

10:45 AM - 11:00 AM

^○Akihiro Ando¹, Yamato Osada², Ryuichiro Kamimura², Akio Wakejima¹, Takashi Egawa¹ (Nagoya Inst. of Tech¹, ULVAC²)

Keywords:GaN