9:45 AM - 10:00 AM
[19a-D9-4] In-line measurement of hydrofluoric acid concentration during SiO2 wet etching
Keywords:フッ酸,濃度,SiO2
Presentation information
Oral presentation
13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation
[19a-D9-1~13] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation
Wed. Mar 19, 2014 9:00 AM - 12:30 PM D9 (D315)