The 61st JSAP Spring Meeting, 2014

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13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19a-D9-1~13] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D9 (D315)

10:15 AM - 10:30 AM

[19a-D9-6] Effect of Si(100) surface flattening process on device characteristics

○Sohya Kudoh1, Shun-ichiro Ohmi1, Dae-Hee Han1, Nithi Atthi1 (Tokyo Tech.1)

Keywords:表面平坦化プロセス,シリコン,デバイス特性