Poster presentation

[18p-PA11-1~8] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Tue. Mar 18, 2014 4:00 PM - 6:00 PM PA11 (アリーナ)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[18p-PA11-1] Electronic and geometric structure of two-dimensional honeycomb allotrope of Si on Ag.

^○R ARAFUNE¹, C. -L. Lin², K. Kawahara², T. Nagao², T. Shirasawa³, E. Minamitani⁴, T. Takahashi³, Y. Kim⁵, M. Kawai², N. Takagi² (MANA-NIMS¹, Graduate School of Frontier Science, The Univ. of Tokyo², ISSP, The Univ. of Tokyo³, Faculty of Engineering, The Univ. of Tokyo⁴, RIKEN⁵)

4:00 PM - 6:00 PM

[18p-PA11-2] Kinetics of hydrogen adsorption on Si(100) surface

^○Yuzuru Narita¹, Shoji Inanaga², Akira Namiki² (Yamagata Univ.¹, Kyushu Inst. Tech.²)

4:00 PM - 6:00 PM

△ [18p-PA11-3] Microstructural analysis of ultra-low reflectivity Si surfaces fabricated by surface structure chemical transfer method

^○Wen Xie^1,2, Daichi Irishika^1,2, Takaaki Nonaka^1,2, Masao Takahashi^1,2, Kentaro Imamura^1,2, Hikaru Kobayashi^1,2 (ISIR, Osaka Univ.¹, CREST-JST²)

4:00 PM - 6:00 PM

[18p-PA11-4] Local Electrical Properties of Mn-Nanodots embedded SiOx MIM Diodes by Atomic Force Microscopy Using a Conducting Probe

^○Takashi Arai¹, Chong Liu¹, Akio Ohta², Katsunori Makihara¹, seiichi Miyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL²)

4:00 PM - 6:00 PM

[18p-PA11-5] Effects of Avalanche Multiplication on Photovoltatic Property of Nanocrystalline Silicon

^○Nobuya Mori^1,2, Nobuyoshi Koshida³ (Osaka Univ.¹, JST CREST², Tokyo Univ. of A&T³)

4:00 PM - 6:00 PM

[18p-PA11-6] Atomistic Simulation of Electron Mobility in Ge Nanowires

Kenta Shimoida¹, Noriyasu Mori¹, ^○Hideaki Tsuchiya^1,4, Yoshinari Kamakura^2,4, Nobuya Mori^2,4, Shigeyasu Uno^3,4, Matsuto Ogawa¹ (Kobe Univ.¹, Osaka Univ.², Ritsumeikan Univ.³, JST CREST⁴)

4:00 PM - 6:00 PM

[18p-PA11-7] Simulation of Transient Characteristics of Self-Heating Effect in Small FETs

^○Yoshinari Kamakura^1,3, Kentaro Kukita¹, Indra Nur Adisusilo¹, Go Wakimura¹, Shunsuke Koba², Hideaki Tsuchiya^2,3, Nobuya Mori^1,3 (Osaka Univ.¹, Kobe Univ.², JST CREST³)

4:00 PM - 6:00 PM

[18p-PA11-8] Simulation of Gate-Oxide thickness dependence for Body Short Type Self-bias Channel Diode Characteristics

^○Daisuke Yamada¹, Tsugutomo Kudoh¹, Fumihiko Sugawara² (Kanagawa Inst. of Tech.¹, Tohoku-Gakuin Univ.²)

Oral presentation

[19a-D9-1~13] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D9 (D315)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[19a-D9-1] Inhibition of copper dissolution by removal of oxidants from rinsing water using noble metal catalysts

^○Daisaku Yano¹, Masami Murayama¹, Masao Takahashi², Hikaru Kobayashi², Koji Yamanaka¹ (Organo¹, Osaka Univ.²)

9:15 AM - 9:30 AM

[19a-D9-2] Molecular Dynamics Analysis on the Microscopic Behavior of Water near SiO₂ Surface

^○Satoshi Nakaoka¹, Yasutaka Yamaguchi¹, Masayuki Kawakami², Daisaku Yano², Koji Yamanaka² (Osaka Univ.¹, Organo Corp.²)

9:30 AM - 9:45 AM

[19a-D9-3] Evaluation Methods for Water Permeation into Fine Pore Patterns

^○Mieko Kashi¹, Takuya Kambayashi¹, Masaki Okawa², Megumi Hamano¹, Toshinori Jin'oka¹, Hiroki Takahashi¹, Katsuhiro Ota¹, Tomonori Saeki¹ (Hitachi Yokohama Research Lab.¹, Kokusai Electric Semiconductor Service²)

9:45 AM - 10:00 AM

[19a-D9-4] In-line measurement of hydrofluoric acid concentration during SiO2 wet etching

^○So Takagi¹, Takuya Onoda¹, Yoshihiro Mori¹ (HORIBA Ltd.¹)

10:00 AM - 10:15 AM

[19a-D9-5] Comparison of Wetting Properties between GeO₂/Ge and SiO₂/Si at Controlled Relative Humidity by in situ XPS

^○Kenta Arima¹, Yoshie Kawai¹, Yuya Minoura¹, Yusuke Saito¹, Daichi Mori¹, Kentaro Kawai¹, Takuji Hosoi¹, Heiji Watanabe¹, Mizuho Morita¹, Zhi Liu² (Osaka Univ.¹, Lawrence Berkeley National Lab.²)

10:15 AM - 10:30 AM

[19a-D9-6] Effect of Si(100) surface flattening process on device characteristics

^○Sohya Kudoh¹, Shun-ichiro Ohmi¹, Dae-Hee Han¹, Nithi Atthi¹ (Tokyo Tech.¹)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[19a-D9-7] Depth profiles of metals gettered by BMDs in silicon substrates

^○Rikiichi Ohno¹, Koichiro Saga¹ (Sony corp.¹)

11:00 AM - 11:15 AM

[19a-D9-8] Theoretical Study of Diffusion Processes at Metal/Semiconductor Interfaces

^○Tomoki Hiramatsu¹, Takashi Nakayama¹ (Chiba Univ.¹)

11:15 AM - 11:30 AM

[19a-D9-9] New evaluation method for the surface energy of MEMS cantilever

^○Ichiroh Kato¹ (JAXA¹)

11:30 AM - 11:45 AM

[19a-D9-10] EXAFS measurement of encapsulated Bi nanoline in Si

^○Koichi Murata^1,2, Kiyofumi Nitta³, Tomoya Uruga³, Yasuko Terada³, Wataru Yashiro⁴, Koh-ichi Nittoh¹, Osami Sakata¹, Kazushi Miki^1,2 (NIMS¹, Univ. of Tsukuba², JASRI³, Tohoku Univ.⁴)

11:45 AM - 12:00 PM

[19a-D9-11] Characterization of Electronic Charged States of Self-Aligned Coupled Si Quantum Dots by AFM/KFM Probe Technique

^○Naoki Tsunekawa¹, Katsunori Makihara¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

12:00 PM - 12:15 PM

[19a-D9-12] Laser-assisted Atom Probe Analysis of Carbon-doped Silicon

^○Teruyuki Kinno¹, Tomokazu Sasaki², Tadakatsu Ohkubo³, Mitsuhiro Tomita¹, Kazuhiro Hono³ (Toshiba R&D Center¹, Toshiba Nanoanalysis², NIMS³)

12:15 PM - 12:30 PM

[19a-D9-13] Size Effects in Ultraviolet Raman Spectra of Si Nanowires and Ultrathin SOI

^○Tetsuya Tada¹, Poborchii Vladimir¹, Yukinori Morita², Geshev Pavel³ (AIST-NeRI¹, GNC-AIST², Institute of Thermophysics³)

Oral presentation

[19p-D9-1~18] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Wed. Mar 19, 2014 2:00 PM - 7:00 PM D9 (D315)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:30〜14:00 （12:30 PM - 2:00 PM）

2:00 PM - 2:15 PM

△ [19p-D9-1] Ab initio analysis on the stability of metal atoms in β-Si3N4/Si structure

^○（M1）Daiki Shibata¹, Syunsuke Kobayashi¹, Koji Sueoka¹, Jun Komachi², Koichiro Saga² (Okayama Pref. Univ.¹, SONY Corp.²)

2:15 PM - 2:30 PM

△ [19p-D9-2] First-principles analysis on stability of contamination metal atoms in β-Si3N4 surface

^○（M2）Syunsuke Kobayashi¹, Daiki Shibata¹, Koji Sueoka¹, Jun Komachi², Koichiro Saga² (Okayama Pref. Univ.¹, SONY Corp.²)

2:30 PM - 2:45 PM

△ [19p-D9-3] Formation of nanocrystalline Si layer and Si micro-hole by using surface structure chemical transfer method

^○Kentaro Imamura¹, Daichi Irishika¹, Tomoki Akai¹, Hikaru Kobayashi¹ (ISIR,Osaka Univ.¹)

2:45 PM - 3:00 PM

△ [19p-D9-4] Evaluation of strain in Si using tip-enhanced Raman spectroscopy

^○Daisuke Kosemura¹, Motohiro Tomita¹, Che Mohd Yusoff Siti Norhidayah¹, Chie Goto², Tetsunari Kawaguchi², Mayumi Misawa², Atsushi Ogura¹ (Meiji Univ.¹, Bruker AXS²)

3:00 PM - 3:15 PM

△ [19p-D9-5] Excitations of LO/TO Phonons in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy

^○Shotaro Yamamoto¹, Daisuke Kosemura¹, Siti Norhidayah Mohd Yusoff¹, Takahiro Kijima¹, Ryosuke Imai¹, Koji Usuda², Atsushi Ogura¹ (Meiji Univ.¹, AIST-GNC²)

3:15 PM - 3:30 PM

△ [19p-D9-6] Two-dimensional Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate by SRRS

^○Motohiro Tomita^1,2, Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (Meiji Univ.¹, JSPS Research Fellow DC², AIST GNC³)

3:30 PM - 3:45 PM

△ [19p-D9-7] Study of Current variability depend on Random Dopant Fluctuation in Source and Drain Region

^○Akito Suzuki¹, Rika Akutsu¹, Hiroya Imai¹, Takefumi Kamioka², Yoshinari Kamakura³, Takanobu Watanabe¹ (Waseda Univ.¹, Toyota Tech. Inst.², Osaka Univ.³)

3:45 PM - 4:00 PM

△ [19p-D9-8] Hydrogen production from silicon nanoparticles fabricated from silicon swarf

^○（M2）Katsuya Kimura^1,3, Masao Takahashi^1,3, Yayoi Kanatani^2,3, Tohru Higo^2,3, Hikaru Kobayashi^1,3 (ISIR Osaka Univ.¹, Nisshin Kase², CREST-JST³)

Break 16:00〜16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

▲ [19p-D9-9] Spatial Variation in Carrier Concentration in Nanocrystal Ni-Si Films Measured by Multimode Scanning Probe Microscopy

^○Leonid Bolotov^1,2, Noriyuki Uchida², Tetsuya Tada², Toshihiko Kanayama² (University of Tsukuba [Univ. of Tsukuba]¹, Advanced Industrial Science and Technology [AIST]²)

4:30 PM - 4:45 PM

[19p-D9-10] High Density Formation of Mn and Mn-Germanide Nanodots Induced by Remote Hydrogen Plasma

^○Yinghui Wen¹, Katsunori Makihara¹, Akio Ohta², Mitsuhisa Ikeda³, Seichi MIyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL², Hiroshima Univ.³)

4:45 PM - 5:00 PM

[19p-D9-11] Characterization of Photoluminescence from P-doped Ge Core Si Quantum Dots

^○（B）Keigo Kondo¹, Yoshihisa Suzuki¹, Katsunori Makihara¹, Mitsuhisa Ikeda², Takeshi Koyama¹, hideo Kishida¹, Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

5:00 PM - 5:15 PM

[19p-D9-12] Electroluminescence from Multiply-Stacking Valency Controlled Si Quantum Dots

^○（M1）Takahisa Yamada¹, Katsunori Makihara¹, Yoshihisa Suzuki¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

5:15 PM - 5:30 PM

[19p-D9-13] Characterization of Electron Emission from High Density Self-aligned Si-based Quantum Dots by Conducting-Probe Atomic Force Microscopy (II)

^○Daichi Takeuchi¹, Katsunori Makihara¹, Akio Ohta², Mitsuhisa Ikeda³, Seiichi Miyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL², Hiroshima Univ.³)

Break 17:30〜17:45 （5:30 PM - 5:45 PM）

5:45 PM - 6:00 PM

[19p-D9-14] Effects of laser fluence optical absorption and electric conduction for silicon supersaturated with sulfur by pulsed laser melting method

^○（M1）Katsuki Nagao¹, Mitsuru Inada², Muneyuki Naitou¹, Kengo Norimura¹, Tatsuya Nakai¹, Tamao Aoki¹, Akira Sugimura¹, Ikurou Umezu¹ (Konan Univ¹, Kansai Univ²)

6:00 PM - 6:15 PM

[19p-D9-15] Phase Diagram of Metal Germanide and Schottky Barrier Height at Germanide/Ge Interfaces

^○（DC）Shota Iizuka¹, Takashi Nakayama¹ (Chiba Univ.¹)

6:15 PM - 6:30 PM

[19p-D9-16] First Principles Study of the Relation between Schottky-barrier Change and Interface Structure at Sn/Ge Interfaces

^○Kyosuke Kobinata¹, Takashi Nakayama¹ (Chiba Univ.¹)

6:30 PM - 6:45 PM

[19p-D9-17] Universal Estimation of Work Function of Transition Metal Carbides and Nitrides

^○Michiko Yoshitake¹ (NIMS¹)

6:45 PM - 7:00 PM

▲ [19p-D9-18] Effects of Nitrogen Concentration on the Electrical Properties of HfN Gate Insulator Formed by ECR Plasma Sputtering

^oElham Heidari¹, Sohya Koudoh¹, Nithi Atthi¹, Dae-Hee Han¹, Shun-ichiro Ohmi¹ (Tokyo Institute of Technology)

Oral presentation

[20a-D9-1~10] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Thu. Mar 20, 2014 9:00 AM - 11:45 AM D9 (D315)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-D9-1] Impact of Surface Roughness on Thermoelectric Properties of Silicon Nanotubes

^○Tomofumi Zushi^1,3, Cresti Alessandro², Pala Marco², Keisaku Yamada⁴, Takanobu Watanabe¹ (Waseda University¹, IMEP-LAHC², JSPS Research Fellow³, University of Tsukuba⁴)

9:15 AM - 9:30 AM

[20a-D9-2] Effect of Device structure on Mg₂Si-Si Hetero-junction Tunneling FET

^○Yan Wu¹, Hiroki Hasegawa¹, Kuniyuki Kakushima², Takanobu Watanabe³, Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui¹, Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE², Waseda Univ.³)

9:30 AM - 9:45 AM

[20a-D9-3] Device Simulation of Junction Barrier Schottky Diode

^○Kazuya Matsuzawa¹, Masatoshi Abe¹, Yoshinori Oda¹, Jun Komachi¹, Hiroyuki Ito¹, Kiyoshi Ishikawa¹ (Semiconductor Technology Academic Research Center¹)

9:45 AM - 10:00 AM

[20a-D9-4] Large Scale Parallelized Device Simulation of IGBT

^○Kiyoshi Ishikawa¹, Kazuya Matsuzawa¹, Yoshinori Oda¹, Hiroo Koshimoto², Tsutomu Ikegami², Koichihanndou Fukuda² (STARC¹, AIST²)

Break 10:00〜10:15 （10:00 AM - 10:15 AM）

10:15 AM - 10:30 AM

[20a-D9-5] First-Principles calculations of Schottky barrier heights of Metal/4H-SiC{0001} Interfaces.

^○Nobuhiko Kato¹, Kazuki Mori¹, Satomichi Nishihara¹, Kazuyuki Okazaki¹, Hideaki Koike¹ (AdvanceSoft Co.¹)

10:30 AM - 10:45 AM

[20a-D9-6] Device simulator developments and applications to SiC devices

^○Ken Yamaguchi¹, Takuhito Kuwabara¹, Hideaki Koike¹ (AdvanceSoft¹)

10:45 AM - 11:00 AM

[20a-D9-7] Three-Dimensional Toporaphical Process Simulation Using Geometrical Models

^○Teppei Tamaki¹, Takeo Ikezawa¹, Hideaki Koike¹ (Advancesoft Co.¹)

11:00 AM - 11:15 AM

[20a-D9-8] Development of Three-dimensional Process Simulator

^○Shin-ichiro Kobayashi¹, Teppei Tamaki¹, Takeo Ikezawa¹, Hideaki Koike¹ (AdvanceSoft Co.¹)

11:15 AM - 11:30 AM

[20a-D9-9] Analysis of Narrow Channel Effect in MOSFETs using Three-dimensional TCAD Simulator

^○Shin-ichiro Kobayashi¹, Teppei Tamaki¹, Achihiro Hmano¹, Takuhito Kuwabara¹, Takeo Ikezawa¹, Hideaki Koike¹ (AdvanceSoft Co. Ltd¹)

11:30 AM - 11:45 AM

[20a-D9-10] Analysis of IGBT using 3D Process and Device Simulator

^○Yasuyuki Ookura¹, Teppei Tamaki¹, Takeo Ikezawa¹, Achihiro Hamano¹, Jun'ichi Tokuya¹, Takuhito Kuwabara¹, Masanori Harada¹, Ken Yamaguchi¹, Hideaki Koike¹ (AdvanceSoft¹)

Sessions

13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[18p-PA11-1~8] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

△ [18p-PA11-3] Microstructural analysis of ultra-low reflectivity Si surfaces fabricated by surface structure chemical transfer method

[19a-D9-1~13] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19p-D9-1~18] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

△ [19p-D9-1] Ab initio analysis on the stability of metal atoms in β-Si3N4/Si structure

△ [19p-D9-2] First-principles analysis on stability of contamination metal atoms in β-Si3N4 surface

△ [19p-D9-3] Formation of nanocrystalline Si layer and Si micro-hole by using surface structure chemical transfer method

△ [19p-D9-4] Evaluation of strain in Si using tip-enhanced Raman spectroscopy

△ [19p-D9-5] Excitations of LO/TO Phonons in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy

△ [19p-D9-6] Two-dimensional Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate by SRRS

△ [19p-D9-7] Study of Current variability depend on Random Dopant Fluctuation in Source and Drain Region

△ [19p-D9-8] Hydrogen production from silicon nanoparticles fabricated from silicon swarf

▲ [19p-D9-9] Spatial Variation in Carrier Concentration in Nanocrystal Ni-Si Films Measured by Multimode Scanning Probe Microscopy

▲ [19p-D9-18] Effects of Nitrogen Concentration on the Electrical Properties of HfN Gate Insulator Formed by ECR Plasma Sputtering

[20a-D9-1~10] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation