The 61st JSAP Spring Meeting, 2014

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13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19p-D9-1~18] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Wed. Mar 19, 2014 2:00 PM - 7:00 PM D9 (D315)

3:30 PM - 3:45 PM

△ [19p-D9-7] Study of Current variability depend on Random Dopant Fluctuation in Source and Drain Region

○Akito Suzuki1, Rika Akutsu1, Hiroya Imai1, Takefumi Kamioka2, Yoshinari Kamakura3, Takanobu Watanabe1 (Waseda Univ.1, Toyota Tech. Inst.2, Osaka Univ.3)

Keywords:EMC/MD,RDF,RTN