[19p-D9-1~18] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19p-D9-13] Characterization of Electron Emission from High Density Self-aligned Si-based Quantum Dots by Conducting-Probe Atomic Force Microscopy (II)

^○Daichi Takeuchi¹, Katsunori Makihara¹, Akio Ohta², Mitsuhisa Ikeda³, Seiichi Miyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL², Hiroshima Univ.³)

Keywords:電子放出,Si量子ドット