10:15 AM - 10:30 AM
[20a-D9-5] First-Principles calculations of Schottky barrier heights of Metal/4H-SiC{0001} Interfaces.
Keywords:SiC,ショットキーバリア高さ,第一原理計算
Presentation information
Oral presentation
13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation
[20a-D9-1~10] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation
Thu. Mar 20, 2014 9:00 AM - 11:45 AM D9 (D315)