Effects of Nitrogen Concentration on the Electrical Properties of HfN Gate Insulator Formed by ECR Plasma Sputtering

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Wed. Mar 19, 2014 2:00 PM - 7:00 PM D9 (D315)

6:45 PM - 7:00 PM

^oElham Heidari¹, Sohya Koudoh¹, Nithi Atthi¹, Dae-Hee Han¹, Shun-ichiro Ohmi¹ (Tokyo Institute of Technology)

Keywords:gate insulator,Hafnium nitride,ECR plasma sputtering