Photoluminescence from highly n-doped, tensile-strained Ge-on-Insulator

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Wed. Mar 19, 2014 9:00 AM - 11:45 AM E11 (E205)

10:15 AM - 10:30 AM

^○Keisuke Nishida¹, Xuejun Xu¹, Kohki Takabayashi¹, Keisuke Yoshida¹, Kentarou Sawano¹, Yasuhiro Shiraki¹, Takuya Maruizumi¹ (Tokyo City Univ.¹)

Keywords:引っ張り歪みゲルマニウム,GOI,フォトルミネッセンス