[19a-E13-1~11] 15.4 III-V-group nitride crystals

▼ [19a-E13-11] Pre-sputter Technology for GaN Acceptor Doping by Mg-ion Implantation

^○（D）Zheng Sun³, Tsutomu Nagayama¹, Tetsuya Watanabe², Yoshio Honda³, Hiroshi Amano^3,4 (Nissin Ion Equipment Co., Ltd.¹, Nissin Electric Co., Ltd.², Department of Electrical Engineering and Computer Science, Nagoya Univ.³, Akasaki Research Center, Nagoya Univ.⁴)

Keywords:GaN, doping,ion implantation