[19a-E13-1~11] 15.4 III-V-group nitride crystals

[19a-E13-8] Emission characteristics of m-plane Al_1-xIn_xN epilayers grown on a freestanding GaN substrate by MOVPE (I)

^○Shigefusa Chichibu¹, Kentaro Furusawa¹, Tomomi Ohtomo¹, kouji Hazu¹, Takeyoshi Onuma¹, Yoichi Ishikawa¹, Masanori Tashiro¹, Hirotaka Ikeda², Kenji Fujito² (IMRAM, Tohoku Univ.¹, Mitsubishi Chemical Corporation²)

Keywords:AlInN