The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[19a-E13-1~11] 15.4 III-V-group nitride crystals

Wed. Mar 19, 2014 9:00 AM - 12:00 PM E13 (E301)

11:00 AM - 11:15 AM

[19a-E13-8] Emission characteristics of m-plane Al1-xInxN epilayers grown on a freestanding GaN substrate by MOVPE (I)

Shigefusa Chichibu1, Kentaro Furusawa1, Tomomi Ohtomo1, kouji Hazu1, Takeyoshi Onuma1, Yoichi Ishikawa1, Masanori Tashiro1, Hirotaka Ikeda2, Kenji Fujito2 (IMRAM, Tohoku Univ.1, Mitsubishi Chemical Corporation2)

Keywords:AlInN