[19a-F12-1~13] 13.4 Devices/Integration Technologies

△ [19a-F12-2] Evaluation of Self-Heating Effects in Nanoscale Bulk and Ultra-Thin BOX SOI MOSFETs Using Four-Terminal Gate Resistance Technique

^○（P）Tsunaki Takahashi¹, Takeo Matsuki³, Takahiro Shinada^2,3, Yasuo Inoue³, Ken Uchida¹ (Dept. Electrical and Electronics Eng., Keio Univ.¹, Nanoelectronics RI, AIST², TIA Headquaters, AIST³)

Keywords:自己加熱効果,極薄膜BOX SOI MOSFET,4端子ゲート抵抗法