[19a-F12-1~13] 13.4 Devices/Integration Technologies

[19a-F12-4] Reduced Minimum Operation Voltage in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells

^○Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Hirofumi Shinohara², Toshiaki Iwamatsu², Hidekazu Oda², Nobuyuki Sugii², Toshiro Hiramoto¹ (IIS, Univ. of Tokyo¹, LEAP²)

Keywords:SRAM,最低動作電圧,ばらつき