The 61st JSAP Spring Meeting, 2014

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19a-PG3-1~13] 14.1 Physical properties of exploratory materials

Wed. Mar 19, 2014 9:30 AM - 11:30 AM PG3 (G棟2階)

9:30 AM - 11:30 AM

[19a-PG3-3] Resistivity Dependence of -FeSi2 on Annealing Temperature

Taichi Inamura1, Takafumi Kato1, Akito Sasaki3, Katsuaki Aoki3, Kuniyuki Kakushima2, Yoshinori Kataoka2, Akira Nishiyama2, Nobuyuki Sugii2, Hitoshi Wakabayashi2, Kazuo Tsutsui2, Kenji Natori1, Hiroshi Iwai1 (Tokyo Tech. FRC1, Tokyo Tech IGSSE2, Toshiba Material Co., LTD3)

Keywords:鉄シリサイド