The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-D3-1~14] 14.1 Physical properties of exploratory materials

Wed. Mar 19, 2014 2:00 PM - 5:45 PM D3 (D114)

4:45 PM - 5:00 PM

[19p-D3-11] Thickness – dependent electrical characterization of β-FeSi2

Takafumi Kato1, Taichi Inamura1, Akito Sasaki3, Katsuaki Aoki3, kuniyuki Kakushima2, Yoshinori Kataoka2, Akira Nishiyama2, Nobuyuki Sugii2, hitoshi Wakabayashi2, kazuo Tsutsui2, Kenji Natori1, Hiroshi Iwai1 (Tokyo Tech. FRC1, Tokyo Tech IGSSE2, Toshiba Material Co., LTD3)

Keywords:FeSi2,環境半導体,光吸収係数