[19p-D6-1~18] 6.4 薄膜新材料

▼ [19p-D6-3] Improvement of Electrical Properties of InGaZnO Thin-Film Transistors by Fluorinated Silicon Nitride Passivation

^○（D）jingxinJiang¹,TatsuyaToda¹,MamoruFuruta¹ (Kochi Univ. of Tech.¹)

キーワード：Thin-film transistor