Properties of Al<sub>2</sub>O<sub>3</sub>/InAlN interface formed by 2-step ALD (2)

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 2:00 PM - 5:30 PM D8 (D215)

4:30 PM - 4:45 PM

^○Takuma Nakano¹, Masahito Chiba¹, Yoichiro Odanagi¹, Masamichi Akazawa¹ (Hokkaido Univ. RCIQE¹)

Keywords:InAlN,ALD,Al₂O₃