Analysis of metal-semiconductor interface in the formation of ohmic contact for GaN based HEMT devices

Mahadevaiah Gopal

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-D8-1~13] 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 2:00 PM - 5:30 PM D8 (D215)

5:15 PM - 5:30 PM

[19p-D8-13] Analysis of metal-semiconductor interface in the formation of ohmic contact for GaN based HEMT devices

^○Mahadevaiah Gopal¹, Takako Motai¹, Akira Yoshioka², Yoshiharu Takada², Hitoshi Sugiyama¹ (Toshiba Corporation, Advanced Discrete device development center, Unit Process development dept.¹, Toshiba Corporation, Advanced Discrete device development center,Device development dept.²)

Keywords:GaN-HEMT,オーミック,界面反応