The 61st JSAP Spring Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-D8-1~13] 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 2:00 PM - 5:30 PM D8 (D215)

2:15 PM - 2:30 PM

[19p-D8-2] Annealing Behavior of Plasma-Induced Defects including Deep Level Defects in GaN

○（D）Takuma Takimoto1, Seiji Nakamura1, Tsugunori Okumura1 (Tokyo Metropolitan Univ.1)

Keywords:GaN,欠陥,プラズマ