[19p-D9-1~18] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

△ [19p-D9-6] Two-dimensional Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate by SRRS

^○Motohiro Tomita^1,2, Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (Meiji Univ.¹, JSPS Research Fellow DC², AIST GNC³)

Keywords:歪Si,ラマン分光法,超解像