[19p-E13-1~17] Materials science of singularity in nitride semiconductors -growth, fabrication, creation of new functions-

[19p-E13-12] Spatio-time-resolved cathodoluminescence studies of high AlN mole fraction Si-doped Al_xGa_1-xN multiple quantum wells grown on an AlN template

^○Shigefusa Chichibu¹, Youichi Ishikawa¹, Kentaro Furusawa¹, Masanori Tashiro¹, Tomomi Ohtomo¹, Hideto Miyake², Kazumasa Hiramatsu² (IMRAM, Tohoku Univ.¹, Mie Univ.²)

Keywords:AlGaN