[19p-E13-1~17] Materials science of singularity in nitride semiconductors -growth, fabrication, creation of new functions-

△ [19p-E13-6] GaInN tunnel junctions with high InN mole fraction

^○（M1）Daichi Minamikawa¹, Yuka Kuwano¹, Shunsuke Kawai¹, Takatoshi Morita¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, satoshi Kamiyama¹, Isamu Akasaki^1,2 (Meijo University¹, Akasaki Reserch Center²)

Keywords:トンネル接合