Resistive Hysteresis and Memory Characteristics of CSD Perovskite-type ferroelectric Thin Films

Presentation information

Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

Wed. Mar 19, 2014 1:15 PM - 6:45 PM E8 (E202)

5:15 PM - 5:30 PM

^○Shimpei Fuchida¹, Shuhei Hashimoto¹, Ziyang Zhang¹, Kaoru Yamashita¹, Minoru Noda¹ (Kyoto Inst. Tech¹)

Keywords:抵抗メモリ,BaTiO3,強誘電体薄膜